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J-GLOBAL ID：201802259561460299   Reference number：18A0238874

Band-Gap Engineering of Graphene Heterostructures by Substitutional Doping with B₃N₃

B_3N_3と置換ドーピングによるグラフェンヘテロ構造のバンドギャップ工学【Powered by NICT】

Author (6)： Sawahata Hisaki (Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8571, Japan) ,  Maruyama Mina (Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8571, Japan) ,  Cuong Nguyen Thanh (International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba, 305-0044, Japan) ,  Omachi Haruka (Department of Chemistry, Nagoya University, Nagoya, 464-8602, Japan) ,  Shinohara Hisanori (Department of Chemistry, Nagoya University, Nagoya, 464-8602, Japan) ,  Okada Susumu (Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8571, Japan)
Material： ChemPhysChem
Volume： 19  Issue： 2  Page： 237-242  Publication year： 2018 
JST Material Number： W1265A  ISSN： 1439-4235  CODEN： CPCHFT  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： We investigated the energetics...

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Thesaurus term： semiconductor ,  *graphene ,  effective mass ,  electronic structure ,  *band gap ,  total energy ,  positive hole ,  *doping ,  *hetero-structure
Semi thesaurus term： 密度汎関数計算 ,  一般化勾配近似 , 【Automatic Indexing@JST】

Author keywords (5)： band-gap engineering ,  BNC hererosheet ,  density functional theory calculations ,  electronic structure ,  graphene

JST classification (3)： Electronic structure of crystalline semiconductors  (BM02060N) ,  Physical chemistry in general  (CB01010X) ,  Electronic structure of molecules  (BH05010Q)

Terms in the title (6)： 置換 ,  ドーピング ,  グラフェン ,  ヘテロ構造 ,  バンドギャップ ,  工学