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J-GLOBAL ID：201802260402119723   Reference number：18A1946040

Dynamics of reactions inhibiting epitaxial growth of Si(100) surfaces via interaction with hydrogen chloride

塩化水素との相互作用によるSi(100)表面のエピタキシャル成長を抑制する反応の動力学【JST・京大機械翻訳】

Author (4)： Kunioshi Nilson (Graduate School of Creative Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Tokyo, Japan) ,  Fujimura Yoshiki (Graduate School of Creative Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Tokyo, Japan) ,  Fuwa Akio (Graduate School of Creative Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Tokyo, Japan) ,  Yamaguchi Katsunori (Graduate School of Creative Science and Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku 169-8555, Tokyo, Japan)
Material： Computational Materials Science  (Comput Mater Sci)
Volume： 155  Page： 28-35  Publication year： 2018 
JST Material Number： W0443A  ISSN： 0927-0256  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： The dynamics of reactions of H...

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Thesaurus term： desorption ,  intermediate ,  calculation ,  vapor deposition ,  cluster ,  *interaction ,  passivation ,  silicon ,  dimer ,  Adsorption ,  surface reaction ,  Hydrochloric Acid ,  *hydrogen chloride ,  *Silicon(100) ,  modification

Author keywords (4)： Silicon surfaces ,  Surface reactions ,  Reaction dynamics ,  Quantum chemical calculations

JST classification (1)： Solid-gos interface in general.  (CB12041H)

Terms in the title (5)： 塩化水素 ,  相互作用 ,  Si ,  エピタキシャル成長 ,  動力学