Art
J-GLOBAL ID:201802270036173320   Reference number:18A1104747

Orientation-dependent dissolution and growth kinetics of InxGa1-xSb by vertical gradient freezing method under microgravity

微小重力下の垂直勾配凍結法によるIn_xGa_1-xSbの配向依存溶解と成長速度論【JST・京大機械翻訳】
Author (12):
Material:
Volume: 496-497  Page: 15-17  Publication year: 2018 
JST Material Number: B0942A  ISSN: 0022-0248  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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InxGa1-x...
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JST classification
Category name(code) classified by JST.
Semiconductor thin films  ,  Crystal growth of metals  ,  Crystal growth of semiconductors 

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