Art

J-GLOBAL ID：201802270093533520   Reference number：18A1860091

Failure analysis of 650 V enhancement mode GaN HEMT after short circuit tests

短絡試験後のV_V強化モードGaN HEMTの故障解析【JST・京大機械翻訳】

Author (5)： Abbate C. (DIEI, University of Cassino and Southern Lazio, Via di Biasio, 43, 03043, Cassino, Italy) ,  Busatto G. (DIEI, University of Cassino and Southern Lazio, Via di Biasio, 43, 03043, Cassino, Italy) ,  Sanseverino A. (DIEI, University of Cassino and Southern Lazio, Via di Biasio, 43, 03043, Cassino, Italy) ,  Tedesco D. (DIEI, University of Cassino and Southern Lazio, Via di Biasio, 43, 03043, Cassino, Italy) ,  Velardi F. (DIEI, University of Cassino and Southern Lazio, Via di Biasio, 43, 03043, Cassino, Italy)
Material： Microelectronics Reliability  (Microelectronics and Reliability)
Volume： 88-90  Page： 677-683  Publication year： 2018 
JST Material Number： C0530A  ISSN： 0026-2714  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： The paper presents the results...

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Thesaurus term： failure mode (mechanics) ,  *failure ,  Computer Simulation ,  fracture testing ,  *HEMT ,  two dimension ,  *gallium nitride ,  melting point ,  *failure analysis ,  metallization (IC) ,  finite element simulation ,  drain voltage ,  computer application ,  utilization
Semi thesaurus term： 電力密度 ,  フィールドプレート ,  保護回路 ,  *GaN HEMT , 【Automatic Indexing@JST】

Author keywords (3)： GaN power HEMT ,  Short circuit ,  Failure analysis

JST classification (1)： Measurement,testing and reliability of solid-state devices  (NC03040G)

Terms in the title (5)： 短絡試験 ,  強化 ,  GaN ,  HEMT ,  故障解析