Art

J-GLOBAL ID：201802270835523564   Reference number：18A1941184

Detection of single holes generated by impact ionization in silicon

シリコン中の衝突イオン化により発生した単一正孔の検出【JST・京大機械翻訳】

Author (7)： Firdaus Himma (Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan) ,  Watanabe Tokinobu (Research Institute of Electronics, Shizuoka University, Hamamatsu 432-8011, Japan) ,  Hori Masahiro (Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan) ,  Moraru Daniel (Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan) ,  Takahashi Yasuo (Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-0814, Japan) ,  Fujiwara Akira (NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi 243-0198, Japan) ,  Ono Yukinori (Graduate School of Science and Technology, Shizuoka University, Hamamatsu 432-8011, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 113  Issue： 16  Page： 163103-163103-5  Publication year： 2018 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We propose a method for the ob...

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Thesaurus term： electric charge ,  *positive hole ,  *collisional ionization ,  electric current ,  *silicon ,  electron injection ,  threshold energy

JST classification (2)： Transistors  (NC03070N) ,  Photodetectors  (NC03083X)

Terms in the title (3)： シリコン ,  衝突イオン化 ,  正孔