Art

J-GLOBAL ID：201802280854106683   Reference number：18A0994814

A Meta-Parameterized Approach for the Evaluation of Semiconductor Technologies -A Comparison between SiC-MOSFET and Si-IGBT Technologies-

半導体技術評価のためのメタパラメータ化アプローチ -SiC-MOSFETとSi-IGBT技術の比較-

Author (3)： Barrera-Cardenas Rene (Faculty of Pure and Applied Sciences, University of Tsukuba) ,  Isobe Takanori (Faculty of Pure and Applied Sciences, University of Tsukuba) ,  Molinas Marta (Department of Engineering Cybernetics, Norwegian University of Science and Technology (NTNU))
Material： IEEJ Journal of Industry Applications  (IEEJ J Ind Appl)
Volume： 7  Issue： 3  Page： 210-217(J-STAGE)  Publication year： 2018 
JST Material Number： F1055A  ISSN： 2187-1094  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *semiconductor ,  *technology assessment ,  *MOSFET ,  *IGBT ,  converter ,  electrical loss ,  volume ,  analysis(separation)
Semi thesaurus term： *SiC MOSFET ,  *technical evaluation ,  bidirectional DC-DC converter ,  power loss ,  comparison analysis ,  volume

Author keywords (5)： semiconductor evaluation ,  power losses ,  SiC MOSFET ,  IGBT ,  volume

JST classification (2)： Power converters  (NB08030B) ,  Transistors  (NC03070N)

Reference (11)：

• (1) J. W. Kolar, J. Biela, S. Waffler, T. Friedli, and U. Badstuebner: “Performance trends and limitations of power electronic systems”, in 2010 6th International Conference on Integrated Power Electronics Systems (CIPS), pp. 1-20 (2010)
• (2) J. W. Kolar, J. Biela, and J. Minibock: “Exploring the pareto front of multi-objective single-phase PFC rectifier design optimization-99.2% efficiency vs. 7kW/din3 power density”, in Power Electronics and Motion Control Conference, 2009. IPEMC '09. IEEE 6th International, pp. 1-21 (2009)
• (3) N. Roscoe, Y. Zhong, and S. Finney: “Comparing SiC MOSFET, IGBT and Si MOSFET in LV distribution inverters”, presented at the 41st Annual Conference of the IEEE Industrial Electronics Society (2015)
• (4) Y. S. K. Lee: “Loss analysis and comparison of high power semiconductor devices in 5MW PMSG MV wind turbine systems”, J. Power Electron. JPE, Vol. 15, No. 5, pp. 1380-1391 (2015)
• (5) R. A. Barrera-Cardenas: Meta-parametrised meta-modelling approach for optimal design of power electronics conversion systems: Application to offshore wind energy. NTNU (2015)

Terms in the title (7)： 半導体技術 ,  評価 ,  パラメータ化 ,  SiC ,  MOSFET ,  Si ,  IGBT