Art

J-GLOBAL ID：201802285203526607   Reference number：18A1417164

High Speed and High Responsivity Avalanche Photodiode Fabricated by Standard CMOS Process in Blue Wavelength Region

青色波長領域における標準CMOSプロセスにより作製された高速かつ高応答のアバランシェフォトダイオード

Author (5)： IIYAMA Koichi (School of Electrical and Computer Engineering, Kanazawa University) ,  MARUYAMA Takeo (School of Electrical and Computer Engineering, Kanazawa University) ,  GYOBU Ryoichi (School of Electrical and Computer Engineering, Kanazawa University) ,  HISHIKI Takuya (School of Electrical and Computer Engineering, Kanazawa University) ,  SHIMOTORI Toshiyuki (School of Electrical and Computer Engineering, Kanazawa University)
Material： IEICE Transactions on Electronics (Web)  (IEICE Trans Electron (Web))
Volume： E101.C  Issue： 7  Page： 574-580(J-STAGE)  Publication year： 2018 
JST Material Number： U0468A  ISSN： 1745-1353  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： silicon ,  photodiode ,  *avalanche photodiode ,  *complementary metal oxide semiconductor ,  digital versatile disk ,  crosstalk (communication disturbance) ,  voltage ,  Blu-ray Disc
Semi thesaurus term： silicon ,  bias voltage ,  optical crosstalk

Author keywords (5)： silicon ,  photodiode ,  avalanche photodiode ,  CMOS ,  blu-ray

JST classification (1)： Photodetectors  (NC03083X)

Reference (18)：

• [1] M. Jutzi, M. Berroth, G. Wöhl, M. Oehme, and E. Kasper, “Ge-on-Si vertical incidence photodiodes with 39-GHz bandwidth,” IEEE Photon. Technol. Lett., vol.17, no.7, pp.1510-1512, 2005. 10.1109/lpt.2005.848546
• [2] Z. Huang, N. Kong, X. Guo, M. Liu, N. Duan, A.L. Beck, S.K. Banerjee, and J.C. Campbell, “21-GHz-bandwidth Germanium-on-Silicon photodiode using thin SiGe buffer layers,” IEEE J. Sel. Top. Quantum Electron., vol.12, no.6, pp.1450-1454, 2006. 10.1109/jstqe.2006.884073
• [3] S. Klinger, M. Berroth, M. Kaschel, M. Oehme, and E. Kasper, “Ge-on-Si p-i-n photodiodes with a 3-dB bandwidth of 49 GHz,” IEEE Photon. Technol. Lett., vol.21, no.13, pp.920-922, 2009. 10.1109/lpt.2009.2020510
• [4] J. Michel, J. Liu, and L.C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nature Photonics, vol.4, pp.527-534, DOI: 10.1038/NPHOTON.2010.157, 2010. 10.1038/nphoton.2010.157
• [5] T.K. Woodward and A.V. Krishnamoorthy, “1-Gb/s integrated optical detectors and receivers in commercial CMOS technologies,” IEEE J. Sel. Top. Quantum Electron. vol.5, no.2, pp.146-156, 1999. 10.1109/2944.778271

Terms in the title (7)： 青色 ,  波長領域 ,  標準 ,  CMOSプロセス ,  作製 ,  応答 ,  アバランシェフォトダイオード