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J-GLOBAL ID：201802286315751964   Reference number：18A0446754

Perspective of negative capacitance FinFETs investigated by transient TCAD simulation

過渡TCADシミュレーションにより研究した負性静電容量FinFETの展望【Powered by NICT】

Author (7)： Ota Hiroyuki (National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan) ,  Fukuda Koichi (National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan) ,  Ikegami Tsutomu (National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan) ,  Hattori Junichi (National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan) ,  Asai Hidehiro (National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan) ,  Migita Shinji (National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan) ,  Toriumi Akira (Graduate School of Engineering, The University of Tokyo, Tokyo, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2017  Issue： IEDM  Page： 15.2.1-15.2.4  Publication year： 2017 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Stability and instability of t...

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Thesaurus term： inversion layer (electronic structure) ,  transient analysis ,  hysteresis ,  instability ,  Hafnium ,  F region ,  time dependence ,  semiconductor ,  *simulation ,  analysis
Semi thesaurus term： 設計指針 ,  *FinFET ,  *TCAD , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (6)： TCAD ,  シミュレーション ,  研究 ,  負性静電容量 ,  FinFET ,  展望