Rchr
J-GLOBAL ID:201901002259289724   Update date: Jul. 17, 2024

GOTO Ken

ゴトウ ケン | GOTO Ken
Research field  (1): Optical engineering and photonics
Research keywords  (7): Quantum Structures of Semiconductor ,  Electrical Properties of Semiconductor ,  Crystal Growth of Nitride Semiconductor ,  Crystal Growth of Oxide Semiconductor ,  Ultra-wide-bandgap semiconductor ,  Near-IR, Visible light, Deep-UV ,  Optical properties on Semiconductor
Research theme for competitive and other funds  (3):
  • 2022 - 2025 Growth of low dislocation density indium oxide single crystal layer to elucidate intrinsic electron mobility
  • 2016 - 2021 Bottom up creation of singularities by utilization of equilibrium and non-equilibrium crystal growth from vapor phase
  • 2010 - 2010 新しい半導体ナノ構造であるコアマルチシェルナノワイヤの光物性研究
Papers (64):
  • Kazutada Ikenaga, Takahito Okuyama, Haruka Tozato, Taro Nishimura, Shogo Sasaki, Ken Goto, Masato Ishikawa, Yoshihiko Takinami, Hideaki Machida, Yoshinao Kumagai. Mass spectrometric study of β-Ga2O3growth process by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics. 2023. 62. SF
  • Tomoka Nishikawa, Ken Goto, Hisashi Murakami, Yoshinao Kumagai, Masahiro Uemukai, Tomoyuki Tanikawa, Ryuji Katayama. Observation of nanopipes in edge-defined film-fed grown β-Ga2O3 substrate and their effect on homoepitaxial surface hillocks. Japanese Journal of Applied Physics. 2023
  • Rie Togashi, Ken Goto, Masataka Higashiwaki, Yoshinao Kumagai. Thermodynamic analysis of molecular beam epitaxy of group-III sesquioxides. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. 5
  • Toshiyuki Iwamoto, Verdad Canila Agulto, Shuang Liu, Youwei Wang, Valynn Katrine Mag-usara, Takashi Fujii, Ken Goto, Yoshinao Kumagai, Makoto Nakajima. Characterization of electrical properties of β-Ga2O3 epilayer and bulk GaAs using terahertz time-domain ellipsometry. Japanese Journal of Applied Physics. 2023. 62. SF
  • Yoshinao Kumagai, Ken Goto, Toru Nagashima, Reo Yamamoto, Michał Boćkowski, Junji Kotani. Influence of growth rate on homoepitaxial growth of AlN at 1450 °C by hydride vapor phase epitaxy. Applied Physics Express. 2022. 15. 11. 115501-115501
more...
MISC (5):
Books (2):
  • Gallium Oxide: Crystal Growth, Materials Properties, and Devices
    Springer 2020
  • Ultra-Wide Bandgap Semiconductor Materials
    Elsevier 2019
Lectures and oral presentations  (180):
  • Electrical Properties Of β-Ga2O3 Homoepitaxial Layer Measured By Terahertz Time-Domain Spectroscopy
    (45th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2020))
  • 水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性の熱力学的検討
    (第81回応用物理学会秋季学術講演会)
  • Vertical gallium oxide transistors with a current aperture formed using nitrogen-ion implantation process
    (4th IEEE Electron Devices Technology and Manufacturing Conference (EDTM) 2020)
  • 水素雰囲気異方性熱エッチング(HEATE)法によるHVPE-In2O3成長層のエッチング特性評価
    (第67回応用物理学会春季学術講演会)
  • Recent Progress in Gallium Oxide Power Transistor Technologies
    (The 3rd Symposium for The Core Research Clusters for Materials Science and Spintronics)
more...
Education (3):
  • 2006 - 2009 Graduate School, University of Tsukuba Graduate School of Pure and Applied Sciences Doctoral Programs in Frontier Science
  • 2001 - 2004 Graduate School, University of Tsukuba Graduate School of Pure and Applied Sciences Master's Program in Materials Science
  • 1997 - 2001 University of Tsukuba Third Cluster of Colleges College of Engineering Sciences
Professional career (1):
  • Ph.D. in Science (University of Tsukuba)
Work history (4):
  • 2019/03 - 現在 Tokyo University of Agriculture and Technology Department of Applied Chemistry Assistant Professor
  • 2010/06 - 2019/02 Tamura Corporation Core Technology Division
  • 2009/04 - 2010/05 Graduate School, University of Tsukuba Graduate School of Pure and Applied Sciences Postdoc
  • 2004/04 - 2006/02 Mitsubishi Electric Corporation Energy and Electric Systems
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