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J-GLOBAL ID：201902221787109119   Reference number：19A1716802

Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser

拡張パルスエキシマレーザを用いた4H-SiCにおけるAlのレーザドーピング深さの増加【JST・京大機械翻訳】

Author (4)： Ikeda Akihiro (Sojo University, Department of Computer and Information Sciences, Sojo Univ Kumamoto Japan 4-22-1 Ikeda, Nishi-ku) ,  Shimokawa Takahi (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744 Motooka, Nishi-ku) ,  Ikenoue Hiroshi (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744, Motooka, Nishi-ku) ,  Asano Tanemasa (Kyushu University, Graduate School of Information Science and Electrical Engineering Fukuoka Japan 744 Motooka, Nishi-ku)
Material： Materials Science Forum  (Mater Sci Forum)
Volume： 963  Page： 412-415  Publication year： 2019 
JST Material Number： D0716B  ISSN： 0255-5476  Document type： Article
Article type： 原著論文  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Abstract/Point： Al doping into 4H-SiC performe...

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Thesaurus term： silicon carbide ,  *pulse ,  granular material ,  ablation ,  laser pulse ,  pulse duration ,  *Aluminum ,  light pulse ,  *doping ,  *excimer laser ,  multiplex ,  laser intensity ,  peak strength ,  *laser doping
Semi thesaurus term： *4H-SiC , 【Automatic Indexing@JST】

Author keywords (6)： Excimer Laser ,  Laser Doping ,  Aluminum Doping ,  Silicon Carbide ,  Optical Pulse Stretcher ,  p-Type Silicon Carbide

JST classification (3)： Fiber reinforced metals  (WE04040C) ,  Mechanical properties  (WB02030U) ,  Properties of ceramics and ceramic whiteware  (YC03030G)

Terms in the title (6)： 拡張 ,  パルス ,  エキシマレーザ ,  4H-SiC ,  Al ,  レーザドーピング