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J-GLOBAL ID：201902225667411523   Reference number：19A1408006

Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using Single Electron Spins

単一Electronスピンを用いた動作半導体デバイスにおける内部電場の直接ナノスケールセンシング【JST・京大機械翻訳】

Author (17)： Iwasaki Takayuki (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan) ,  Iwasaki Takayuki (CREST, Japan Science and Technology Agency, Japan) ,  Naruki Wataru (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan) ,  Tahara Kosuke (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan) ,  Tahara Kosuke (CREST, Japan Science and Technology Agency, Japan) ,  Makino Toshiharu (CREST, Japan Science and Technology Agency, Japan) ,  Makino Toshiharu (Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Japan) ,  Kato Hiromitsu (CREST, Japan Science and Technology Agency, Japan) ,  Kato Hiromitsu (Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Japan) ,  Ogura Masahiko (CREST, Japan Science and Technology Agency, Japan) ,  Ogura Masahiko (Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Japan) ,  Takeuchi Daisuke (CREST, Japan Science and Technology Agency, Japan) ,  Takeuchi Daisuke (Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Japan) ,  Yamasaki Satoshi (CREST, Japan Science and Technology Agency, Japan) ,  Yamasaki Satoshi (Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Japan) ,  Hatano Mutsuko (Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Japan) ,  Hatano Mutsuko (CREST, Japan Science and Technology Agency, Japan)
Material： ACS Nano
Volume： 11  Issue： 2  Page： 1238-1245  Publication year： Feb. 2017 
JST Material Number： W2326A  ISSN： 1936-0851  CODEN： ANCAC3  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： The electric field inside semi...

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Thesaurus term： diode ,  Diamond ,  depletion layer ,  *semiconductor device ,  Magnetics ,  scanning probe microscope ,  resonance frequency ,  *electric field ,  magnetic resonance ,  sensor ,  electron spin ,  band gap ,  *nano scale ,  ore ,  precious stone
Semi thesaurus term： デバイスシミュレータ ,  逆バイアス , 【Automatic Indexing@JST】

Author keywords (5)： nanoscale electric field sensing ,  semiconductor device ,  diamond ,  nitrogen-vacancy center ,  single electron spin

JST classification (4)： Transistors  (NC03070N) ,  Atomic and molecular clusters  (BH09030O) ,  Semiconductor thin films  (BK14040E) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (3)： スピン ,  半導体デバイス ,  内部電場