Art

J-GLOBAL ID：201902230607989276   Reference number：19A0014325

Fabrication and characterization of sub-micron scale hall devices from 2-dimensional electron gas at the heterostrutcure of GaAs/AlGaAs

GaAs/AlGaAsのヘテロ構造における2次元電子ガスからのサブミクロンスケールHall素子の作製と特性評価【JST・京大機械翻訳】

Author (6)： Keswani Neeti (Department of Physics, Indian Institute of Technology, Delhi, India) ,  Nakajima Yoshikata (Bio-Nano Electronic Research Centre, Toyo University 2100, Kujirai, Kawagoe, Saitama 350-8585, Japan) ,  Chauhan Neha (Bio-Nano Electronic Research Centre, Toyo University 2100, Kujirai, Kawagoe, Saitama 350-8585, Japan) ,  Kumar Sakthi (Bio-Nano Electronic Research Centre, Toyo University 2100, Kujirai, Kawagoe, Saitama 350-8585, Japan) ,  Ohno H. (Tohoku University, Sendai, Japan) ,  Das Pintu (Department of Physics, Indian Institute of Technology, Delhi, India)
Material： AIP Conference Proceedings  (AIP Conf Proc)
Volume： 1953  Issue： 1  Page： 050071-050071-4  Publication year： 2018 
JST Material Number： D0071C  ISSN： 0094-243X  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： In this work, we report the fa...

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Thesaurus term： X-ray photoelectron spectroscopy ,  magnetic reluctance ,  alloy ,  *gallium arsenide ,  electron beam lithography ,  metallization (IC) ,  carrier mobility ,  *two dimensional electron gas ,  wet etching ,  Magnetics ,  multiplex ,  *characterization ,  *aluminum gallium arsenide ,  *hetero-structure
Semi thesaurus term： 暗所 , 【Automatic Indexing@JST】

JST classification (2)： Semiconductor-semiconductor contacts with Gr.13-15 element compounds  (BM03082Y) ,  Solid-state plasmas  (BM02160W)

Terms in the title (7)： GaAs ,  AlGaAs ,  ヘテロ構造 ,  2次元電子ガス ,  Hall素子 ,  作製 ,  特性評価