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J-GLOBAL ID：201902237267347302   Reference number：19A2025852

Hot Carriers in CVD-Grown Graphene Device with a Top h-BN Layer

トップh-BN層を持つCVD成長グラフェンデバイス中のホットキャリア【JST・京大機械翻訳】

Author (14)： Chuang C. (Department of Materials Science, Chiba University, Chiba 263-8522, Japan) ,  Chuang C. (Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan) ,  Mineharu M. (Department of Materials Science, Chiba University, Chiba 263-8522, Japan) ,  Matsumoto N. (Department of Materials Science, Chiba University, Chiba 263-8522, Japan) ,  Matsunaga M. (Department of Materials Science, Chiba University, Chiba 263-8522, Japan) ,  Liu C.-W. (Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan) ,  Wu B.-Y. (Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan) ,  Kim Gil-Ho (School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea) ,  Lin L.-H. (Department of Electrophysics, National Chiayi University, Chiayi 600, Taiwan) ,  Ochiai Y. (Department of Materials Science, Chiba University, Chiba 263-8522, Japan) ,  Watanabe K. (Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan) ,  Taniguchi T. (Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan) ,  Liang C.-T. (Graduate Institute of Applied Physics, National Taiwan University, Taipei 10617, Taiwan) ,  Aoki N. (Department of Materials Science, Chiba University, Chiba 263-8522, Japan)
Material： Journal of Nanomaterials (Web)  (J Nanomater (Web))
Volume： 2018  Page： Null  Publication year： 2018 
JST Material Number： U7011A  ISSN： 1687-4110  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： We investigate the energy rela...

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Thesaurus term： magnetic field ,  *hot carrier ,  thermal diffusion ,  electron-phonon interaction ,  thermometer ,  nonequilibrium state ,  energy loss ,  *graphene
Semi thesaurus term： 多層グラフェン ,  音響フォノン ,  駆動電流 ,  格子温度 ,  コンダクタンス揺らぎ ,  エネルギー緩和 ,  *六方晶窒化ホウ素 , 【Automatic Indexing@JST】

JST classification (5)： Atomic and molecular clusters  (BH09030O) ,  Semiconductor integrated circuit  (NC03162T) ,  Crystal growth of semiconductors  (BK13040X) ,  Thin films of organic compounds  (BK14070L) ,  Electric conduction in crystalline semiconductors  (BM03043X)

Reference (43)：

• X. Du, D. E. Prober, H. Vora, C. B. Mckitterick, "Graphene-based bolometers," Graphene 2D Mater, vol. 1, 2014.
• J. Huang, J. A. Alexander-Webber, T. J. B. M. Janssen et al., "Hot carrier relaxation of Dirac fermions in bilayer epitaxial graphene," Journal of Physics: Condensed Matter, vol. 27, 2015.
• C. Voisin, B. Plaçais, "Hot carriers in graphene," Journal of Physics: Condensed Matter, vol. 27, 2015.
• A. Tzalenchuk, S. Lara-Avila, A. Kalaboukhov et al., "Towards a quantum resistance standard based on epitaxial graphene," Nature Nanotechnology, vol. 5, pp. 186, 2010.
• A. E. Fatimy, R. L. Myers-Ward, A. K. Boyd, K. M. Daniels, D. K. Gaskill, P. Barbara, "Epitaxial graphene quantum dots for high-performance terahertz bolometers," Nature Nanotechnology, vol. 11, pp. 335, 2016.

Terms in the title (6)： トップ ,  h-BN ,  CVD ,  成長 ,  グラフェン ,  ホットキャリア