Art

J-GLOBAL ID：201902254592590316   Reference number：19A1618218

Effects of Gravity and Crystal Orientation on the Growth of InGaSb Ternary Alloy Semiconductors-Experiments at the International Space Station and on Earth-

InGaSb三元合金半導体の成長に及ぼす重力と結晶方位の影響-国際宇宙ステーションと地上での実験

Author (14)： HAYAKAWA Yasuhuro (Shizuoka Univ., Shizuoka, JPN) ,  NIRMAL KUMAR Velu (Shizuoka Univ., Shizuoka, JPN) ,  ARIVANANDHAN Mukannan (Anna Univ., Chennai, IND) ,  RAJESH Govindasamy (Shizuoka Univ., Shizuoka, JPN) ,  KOYAMA Tadanobu (Shizuoka Univ., Shizuoka, JPN) ,  MOMOSE Yoshimi (Shizuoka Univ., Shizuoka, JPN) ,  SAKATA Kaoruho (Univ. Tokyo, Chiba, JPN) ,  OZAWA Tetsuo (Shizuoka Inst. of Sci. and Technol., Shizuoka, JPN) ,  OKANO Yasunori (Osaka Univ., Osaka, JPN) ,  OKANO Yasunori (Japan Aerospace Exploration Agency, Kanagawa, JPN) ,  OKANO Yasunori (Shizuoka Univ., Shizuoka, JPN) ,  INATOMI Yuko (Japan Aerospace Exploration Agency, Kanagawa, JPN) ,  INATOMI Yuko (SOKENDAI (Graduate Univ. for Advanced Studies), Kanagawa, JPN) ,  INATOMI Yuko (Shizuoka Univ., Shizuoka, JPN)
Material： International Journal of Microgravity Science and Application (Web)  (IJMSA (Web))
Volume： 34  Issue： 1  Page： ROMBUNNO.340111 (WEB ONLY)  Publication year： Jan. 31, 2017 
JST Material Number： U1608A  ISSN： 2188-9783  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： antimonide ,  indium compound ,  gallium compound ,  compound semiconductor ,  ternary alloy ,  *crystal growth ,  crystal orientation ,  *semiconductor alloys ,  Convection ,  growth rate ,  alloy semiconductor ,  int'l space station ,  microgravity environment ,  gallium-indium antimonide ,  semiconductor growth
Semi thesaurus term： InGaSb ,  *space experiment ,  semiconductor crystal growth

JST classification (1)： Crystal growth of semiconductors  (BK13040X)

Reference (21)：

• S. Wang, Lattice Engineering: Technology and Applications, Pan Stanford Publishing, Singapore, 2013.
• N.T. Yeh, P.C. Chiu, J.I. Chyi, F. Ren and S. J. Pearton: J. Mater. Chem., C, 1 (2013) 4616.
• P.S. Dutta, H.L. Bhat and V. Kumar: J. Appl. Phys., 81 (1997) 5821.
• R. Rogalski and P. Martyniuk: Infrared Physics & Technology, 48 (2006) 39.
• P.S. Dutta: J. Cryst. Growth, 275 (2005) 106.

Terms in the title (8)： InGaSb ,  合金半導体 ,  成長 ,  重力 ,  結晶方位 ,  宇宙ステーション ,  地上 ,  実験