Art

J-GLOBAL ID：201902256642310646   Reference number：19A1889036

Very Gradual and Anomalous Oxidation at the Interface of Hydrogen-Intercalated Graphene/4H-SiC(0001)

水素挿入グラフェン/4H-SiC(0001)の界面における非常に緩やかで異常な酸化【JST・京大機械翻訳】

Author (5)： Maeda Fumihiko (Department of Information Electronics, Faculty of Engineering, Fukuoka Institute of Technology, Fukuoka, Japan) ,  Maeda Fumihiko (NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Kanagawa, Japan) ,  Takamura Makoto (NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Kanagawa, Japan) ,  Hibino Hiroki (NTT Basic Research Laboratories, Nippon Telegraph and Telephone Corporation, Kanagawa, Japan) ,  Hibino Hiroki (Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Hyogo, Japan)
Material： Journal of Physical Chemistry C  (Journal of Physical Chemistry C. Energy Conversion and Storage, Optical and Electronic Devices, Interfaces, Nanomaterials, and Hard Matter)
Volume： 121  Issue： 47  Page： 26389-26396  Publication year： 2017 
JST Material Number： W1877A  ISSN： 1932-7447  CODEN： JPCCCK  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We analyzed the surfaces of hy...

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Thesaurus term： *interface (surface) ,  electric current ,  silicon oxide ,  annealing (heat treatment) ,  Oxygen ,  *silicon carbide ,  *graphene ,  *oxidation ,  *silicon ,  intercalation ,  overlayer ,  carrier mobility ,  Raman spectroscopy ,  Photoelectron Spectroscopy ,  silicon monoxide

JST classification (1)： Carbon and its compounds  (YB02060D)

Terms in the title (5)： 水素 ,  グラフェン ,  4H-SiC ,  界面 ,  酸化