Art
J-GLOBAL ID:201902264503313745   Reference number:19A1918411

Tuning Transition-Metal Dichalcogenide Field-Effect Transistors by Spontaneous Pattern Formation of an Ultrathin Molecular Dopant Film

超薄分子ドーパント膜の自発パターン形成による遷移金属ジカルコゲナイド電界効果トランジスタの同調【JST・京大機械翻訳】
Author (9):
Material:
Volume: 12  Issue: 10  Page: 10123-10129  Publication year: 2018 
JST Material Number: W2326A  ISSN: 1936-0851  CODEN: ANCAC3  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
Abstract/Point:
Abstract/Point
Japanese summary of the article(about several hundred characters).
All summary is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
Spontaneous pattern formation ...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=19A1918411&from=J-GLOBAL&jstjournalNo=W2326A") }}
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.

Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
, 【Automatic Indexing@JST】
JST classification (5):
JST classification
Category name(code) classified by JST.
Techniques for samples  ,  Oxide thin films  ,  Manufacturing of gaseous fuels  ,  Manufacturing technology of solid-state devices  ,  Biomembrane in general 

Return to Previous Page