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J-GLOBAL ID:201902266363006798   Reference number:19A1873429

Characterization of the electrical properties of an InN epilayer using terahertz time-domain spectroscopic ellipsometry

テラヘルツ時間領域分光偏光解析法を用いたInNエピ層の電気的性質のキャラクタリゼーション
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Material:
Volume: 58  Issue: SC  Page: SCCB22.1-SCCB22.4  Publication year: Jun. 2019
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Infrared spectra,Raman scattering and Raman spectra of semiconductors 

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