Art

J-GLOBAL ID：201902276832662591   Reference number：19A1553156

Enhancement of InN Luminescence by Introduction of Graphene Interlayer

グラフェン中間層の導入によるInNルミネセンスの増強【JST・京大機械翻訳】

Author (7)： Dobrovolskas Darius (Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania) ,  Arakawa Shingo (Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan) ,  Mouri Shinichiro (Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan) ,  Araki Tsutomu (Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan) ,  Nanishi Yasushi (Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan) ,  Mickevicius Juras (Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania) ,  Tamulaitis Gintautas (Institute of Photonics and Nanotechnology, Vilnius University, Sauletekio al. 3, LT-10257 Vilnius, Lithuania)
Material： Nanomaterials (Web)
Volume： 9  Issue： 3  Page： 417  Publication year： 2019 
JST Material Number： U7252A  ISSN： 2079-4991  Document type： Article
Article type： 原著論文  Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Abstract/Point： Indium nitride (InN) luminesce...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=19A1553156&from=J-GLOBAL&jstjournalNo=U7252A") }}

Thesaurus term： buffer layer ,  *Luminescence ,  band gap ,  characterization ,  light emission ,  particle size (ratio) ,  aluminum nitride ,  *graphene ,  photoluminescence ,  gallium nitride ,  lattice mismatch ,  indium nitride ,  epitaxial layer ,  multilayer graphene ,  *interlayer

Author keywords (4)： graphene ,  indium nitride ,  molecular beam epitaxy ,  photoluminescence

JST classification (3)： Medical materials  (GA05040H) ,  Cell physiology in general  (EF02010S) ,  Basic research of pharmacology of crude drugs  (GX06020J)

Reference (21)：

• Wu, J. When Group-III Nitrides Go Infrared: New Properties and Perspectives. J. Appl. Phys. 2009, 106, 011101.
• Look, D.C.; Lu, H.; Schaff, W.J.; Jasinski, J.; Liliental-Weber, Z. Donor and Acceptor Concentrations in Degenerate InN. Appl. Phys. Lett. 2002, 80, 258.
• Piper, L.F.J.; Veal, T.D.; McConville, C.F.; Lu, H.; Schaff, W.J. Origin of the n-type Conductivity of InN: The Role of Positively Charged Dislocations. Appl. Phys. Lett. 2006, 88, 252109.
• Reshchikov, M.A.; Morkoç, H. Luminescence Properties of Defects in GaN. J. Appl. Phys. 2005, 97, 061301.
• Shubina, T.V.; Toropov, A.A.; Jmerik, V.N.; Kuritsyn, D.I.; Gavrilenko, L.V.; Krasil’nik, Z.F.; Araki, T.; Nanishi, Y.; Gil, B.; Govorov, A.O.; et al. Plasmon-induced Purcell effect in InN/In metal-semiconductor nanocomposites. Phys. Rev. B 2010, 82, 073304.

Terms in the title (5)： グラフェン ,  中間層 ,  InN ,  ルミネセンス ,  増強