Art

J-GLOBAL ID：201902286555820504   Reference number：19A1143161

Observation of single optical site of Eu and Mg codoped GaN grown by NH₃-source molecular beam epitaxy

NH_3ソース分子ビームエピタクシーにより成長させたEuおよびMg共ドープGaNの単一光学サイトの観察【JST・京大機械翻訳】

Author (6)： Sekiguchi Hiroto (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Sakai Masaru (Department of Research Interdisciplinary Graduate School of Medicine and Engineering Division of Engineering Electromechanical and Information System Engineering, University of Yamanashi, Kofu, Yamanashi 400-8510, Japan) ,  Kamada Takuho (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Yamane Keisuke (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Okada Hiroshi (Institute of Liberal Arts and Sciences, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan) ,  Wakahara Akihiro (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 125  Issue： 17  Page： 175702-175702-5  Publication year： 2019 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Eu-doped GaN (GaN:Eu) is a pro...

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Thesaurus term： MBE growth ,  quantum information ,  Luminescence ,  optical property ,  *Europium ,  *doping ,  photoluminescence ,  *gallium nitride ,  excitation cross section

JST classification (2)： Luminescence of inorganic compounds  (BM08093J) ,  Luminescence of semiconductors  (BM08092S)

Terms in the title (9)： ソース ,  分子ビームエピタクシー ,  成長 ,  Eu ,  Mg ,  ドープ ,  GaN ,  光学 ,  観察