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J-GLOBAL ID:201902290115860468   Reference number:19A1042746

Structural and photoluminescence properties of ZnO nanorods grown on ion-plated Ga-doped ZnO seed layers by chemical bath deposition and fabrication of poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate)/ZnO nanorods heterostructures

化学浴堆積によりイオンめっきしたGaドープZnOシード層上に成長させたZnOナノロッドの構造と光ルミネセンス特性およびポリ(3,4-エチレンジオキシチオフェン)ポリ(スチレンスルホナート/ZnOナノロッドのヘテロ構造の作製【JST・京大機械翻訳】
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Volume: 677  Page: 109-118  Publication year: 2019 
JST Material Number: B0899A  ISSN: 0040-6090  Document type: Article
Article type: 原著論文  Country of issue: Netherlands (NLD)  Language: ENGLISH (EN)
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Vertically aligned zinc oxide ...
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Oxide thin films  ,  Luminescence of semiconductors 

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