Art

J-GLOBAL ID：201902291437990459   Reference number：19A1455052

Impact of Ar atom irradiation on the crystallinity of GaAs/Si interfaces fabricated by surface activated bonding at room temperature

室温での表面活性化結合により作製したGaAs/Si界面の結晶度に及ぼすAr原子照射の影響【JST・京大機械翻訳】

Author (6)： Ohno Yutaka (Institute for Materials Research (IMR), Tohoku University, Sendai, 980-8577, Japan) ,  Miyagawa Reina (Department of Physical Science and Engineering, Nagoya Institute of Technology, Gokiso-cho, Nagoya, 466-8555, Japan) ,  Yoshida Hideto (The Institute of Scientific and Industrial Research (ISIR), Osaka University, Osaka, 567-0047, Japan) ,  Takeda Seiji (The Institute of Scientific and Industrial Research (ISIR), Osaka University, Osaka, 567-0047, Japan) ,  Liang Jianbo (Graduate School of Engineering, Osaka City University, Osaka, 558-8585, Japan) ,  Shigekawa Naoteru (Graduate School of Engineering, Osaka City University, Osaka, 558-8585, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： LTB-3D  Page： 2  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Arsenic (As) vacancies are int...

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Thesaurus term： arsenic ,  *interface (surface) ,  *Argon ,  *silicon ,  *gallium arsenide ,  interstitial atom ,  annealing (heat treatment) ,  *crystallinity ,  recombination (connection)
Semi thesaurus term： *表面活性化 , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (9)： 室温 ,  表面活性化 ,  作製 ,  GaAs ,  Si ,  界面 ,  結晶度 ,  Ar ,  原子