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J-GLOBAL ID：202002215461128737   Reference number：20A1716351

Effect of thermally annealed atomic-layer-deposited AlO/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality

接合品質を改善するためのPEDOT:PSS/n型Si界面における熱アニール原子層堆積AlO/化学トンネル酸化物スタック層の効果【JST・京大機械翻訳】

Author (11)： Karim Md Enamul (Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan) ,  Nasuno Yuki (Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan) ,  Kuddus Abdul (Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan) ,  Ukai Tomofumi (Bio-Nano Electronics Research Center, Toyo University, Kawagoe Saitama 335-8585, Japan) ,  Kurosu Shunji (Bio-Nano Electronics Research Center, Toyo University, Kawagoe Saitama 335-8585, Japan) ,  Tokuda Masahide (Bio-Nano Electronics Research Center, Toyo University, Kawagoe Saitama 335-8585, Japan) ,  Fujii Yasuhiko (Bio-Nano Electronics Research Center, Toyo University, Kawagoe Saitama 335-8585, Japan) ,  Hanajiri Tatsuro (Bio-Nano Electronics Research Center, Toyo University, Kawagoe Saitama 335-8585, Japan) ,  Ishikawa Ryo (Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan) ,  Ueno Keiji (Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan) ,  Shirai Hajime (Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 128  Issue： 4  Page： 045305-045305-12  Publication year： 2020 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We investigated the effects of...

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Thesaurus term： *interface (surface) ,  chemical bond ,  annealing (heat treatment) ,  electric potential ,  electric field ,  *oxide ,  passivation ,  sheet resistance ,  *thermal annealing ,  heterojunction solar cell ,  minority carrier lifetime ,  modification
Semi thesaurus term： 開回路電圧 , 【Automatic Indexing@JST】

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Semiconductor thin films  (BK14040E)

Terms in the title (11)： 接合品質 ,  PEDOT ,  PSS ,  Si ,  界面 ,  熱アニール ,  原子層堆積 ,  化学 ,  トンネル ,  酸化物 ,  スタック