Art
J-GLOBAL ID:202002215461128737   Reference number:20A1716351

Effect of thermally annealed atomic-layer-deposited AlO/chemical tunnel oxide stack layer at the PEDOT:PSS/n-type Si interface to improve its junction quality

接合品質を改善するためのPEDOT:PSS/n型Si界面における熱アニール原子層堆積AlO/化学トンネル酸化物スタック層の効果【JST・京大機械翻訳】
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Volume: 128  Issue:Page: 045305-045305-12  Publication year: 2020 
JST Material Number: C0266A  ISSN: 0021-8979  CODEN: JAPIAU  Document type: Article
Article type: 原著論文  Country of issue: United States (USA)  Language: ENGLISH (EN)
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We investigated the effects of...
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Manufacturing technology of solid-state devices  ,  Semiconductor thin films 

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