Art

J-GLOBAL ID：202002217813195791   Reference number：20A1872489

Grain-boundary structures and their impact on the electrical properties of NiO films deposited by reactive sputtering

反応性スパッタリングにより堆積したNiO膜の電気的性質に及ぼす粒界構造とそれらの影響【JST・京大機械翻訳】

Author (4)： Iwata Tatsuya (Department of Electronic Science and Engineering, Kyoto University, Kyoto, 6158510, Japan) ,  Iwata Tatsuya (Toyama Prefectural University, Imizu, Toyama, 9390398, Japan) ,  Nishi Yusuke (Department of Electronic Science and Engineering, Kyoto University, Kyoto, 6158510, Japan) ,  Kimoto Tsunenobu (Department of Electronic Science and Engineering, Kyoto University, Kyoto, 6158510, Japan)
Material： Thin Solid Films
Volume： 709  Page： Null  Publication year： 2020 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Nickel oxide (NiO) is an exten...

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Thesaurus term： X-Ray Diffraction ,  grain boundary ,  electrical resistivity ,  electric conduction ,  electron microscopy ,  thin film ,  segregation (concentration distribution) ,  flow rate ,  *Nickel ,  X-ray diffractometry ,  nickel oxide ,  *reactive sputtering ,  transmission electron microscope ,  temperature coefficient ,  applied voltage ,  resistance switching
Semi thesaurus term： 電圧印加 , 【Automatic Indexing@JST】

Author keywords (6)： Nickel oxide ,  Thin film ,  Resistive switching ,  Quantum point contact ,  Grain boundary ,  Reactive radio-frequency sputtering

JST classification (2)： Oxide thin films  (BK14050P) ,  Metallic thin films  (BK14030T)

Terms in the title (5)： 反応性スパッタリング ,  堆積 ,  NiO ,  電気的性質 ,  粒界構造