Art

J-GLOBAL ID：202002225780460503   Reference number：20A2575581

Combined infrared reflectance and Raman spectroscopy analysis of Si-doping limit of GaN

GaNのSiドーピング限界の結合赤外反射率とRaman分光分析【JST・京大機械翻訳】

Author (7)： Ma Bei (Graduate School of Electrical and Electronic Engineering, Chiba University, 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan) ,  Tang Mingchuan (Graduate School of Electrical and Electronic Engineering, Chiba University, 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan) ,  Ueno Kohei (Institute of Industrial Science, The University of Tokyo, Tokyo, 4-6-1 Komaba, Meguro-ku 153-8505, Japan) ,  Kobayashi Atsushi (Institute of Industrial Science, The University of Tokyo, Tokyo, 4-6-1 Komaba, Meguro-ku 153-8505, Japan) ,  Morita Ken (Graduate School of Electrical and Electronic Engineering, Chiba University, 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan) ,  Fujioka Hiroshi (Institute of Industrial Science, The University of Tokyo, Tokyo, 4-6-1 Komaba, Meguro-ku 153-8505, Japan) ,  Ishitani Yoshihiro (Graduate School of Electrical and Electronic Engineering, Chiba University, 1-30 Yayoicho, Inage-ku, Chiba 263-8522, Japan)
Material： Applied Physics Letters  (Appl Phys Lett)
Volume： 117  Issue： 19  Page： 192103-192103-6  Publication year： 2020 
JST Material Number： H0613A  ISSN： 0003-6951  CODEN： APPLAB  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Heavily Si-doped GaN layers gr...

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Thesaurus term： Raman scattering ,  electron density ,  *silicon ,  *doping ,  pulse ,  cubic system ,  *gallium nitride ,  sputtered deposition ,  *Raman spectrometry
Semi thesaurus term： *赤外反射 ,  フォノンモード , 【Automatic Indexing@JST】

JST classification (4)： Lattice defects in semiconductors  (BK12040Q) ,  Infrared and Raman spectra of inorganic molecules  (BH06032B) ,  Infrared spectra,Raman scattering and Raman spectra of semiconductors  (BM08066B) ,  Semiconductor thin films  (BK14040E)

Terms in the title (6)： GaN ,  Si ,  ドーピング ,  限界 ,  赤外反射 ,  Raman分光分析