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J-GLOBAL ID：202002229713407845   Reference number：20A1318978

Electrical resistivity reduction and spatial homogenization of Ga-doped ZnO film by Zn layer insertion

Zn層挿入によるGaドープZnO膜の電気抵抗率低減と空間的均質化【JST・京大機械翻訳】

Author (6)： Yamada Yasuji (Physics and Materials Science, Shimane University 1060 Nishikawatsu, Matsue 690-8405, Japan) ,  Sancakoglu Orkut (Physics and Materials Science, Shimane University 1060 Nishikawatsu, Matsue 690-8405, Japan) ,  Sancakoglu Orkut (Metallurgical and Materials Engineering, Dokuz Eylul University 35160 Buca, Izmir, Turkey) ,  Sugiura Rei (Physics and Materials Science, Shimane University 1060 Nishikawatsu, Matsue 690-8405, Japan) ,  Shoriki Motonari (Physics and Materials Science, Shimane University 1060 Nishikawatsu, Matsue 690-8405, Japan) ,  Funaki Shuhei (Physics and Materials Science, Shimane University 1060 Nishikawatsu, Matsue 690-8405, Japan)
Material： Thin Solid Films
Volume： 707  Page： Null  Publication year： 2020 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Ga-doped ZnO (GZO) films inser...

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Thesaurus term： lattice defect ,  annealing (heat treatment) ,  *electrical resistivity ,  *Zinc ,  electrical property ,  *Gallium ,  *zinc oxide ,  *doping ,  carrier density ,  sputtered deposition ,  thermal annealing ,  erosion
Semi thesaurus term： キャップ層 , 【Automatic Indexing@JST】

Author keywords (5)： Transparent conducting oxide ,  Sputtering ,  Annealing ,  Acceptor-like defect ,  Carrier density

JST classification (1)： Oxide thin films  (BK14050P)

Terms in the title (6)： Zn ,  Ga ,  ドープ ,  ZnO ,  電気抵抗率 ,  均質化