Art

J-GLOBAL ID：202002234241379844   Reference number：20A0910401

First Stacked Ge_0.88Sn_0.12 pGAAFETs with Cap, LG=4Onm, Compressive Strain of 3.3%, and High S/D Doping by CVD Epitaxy Featuring Record ION of 58μA at V_OV=V_DS= -0.5V, Record G_m,max of 172μS at V_DS= -0.5V, and Low Noise

V_dS=-0.5V,低雑音におけるV_OV=V_Ds=-0.5V,記録G_m,maxの記録イオンを特徴とするCVDエピタクシーによる第一積層Ge_0.88Sn_0.12 pGaAsFET,3.3%の圧縮歪と高S/Dドーピング【JST・京大機械翻訳】

Author (7)： Huang Yu-Shiang (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Tsai Chung-En (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Tu Chien-Te (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Ye Hung-Yu (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Liu Yi-Chun (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Lu Fang-Liang (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan) ,  Liu C. W. (National Taiwan University,Graduate Institute of Electronics Engineering,Taipei,Taiwan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2019  Issue： IEDM  Page： 29.5.1-29.5.4  Publication year： 2019 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： Record [Sn]=12% and record com...

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Thesaurus term： *ion ,  *epitaxy ,  interface(surface) ,  contact resistance ,  transistor ,  silicon ,  *germanium ,  low frequency noise(signal) ,  *doping ,  three dimension ,  nanosheet ,  gate dielectric film
Semi thesaurus term： 不純物散乱 ,  *圧縮歪 ,  トラッピング , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (7)： 低雑音 ,  Max ,  イオン ,  CVD ,  エピタクシー ,  圧縮歪 ,  ドーピング