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J-GLOBAL ID：202002245190198545   Reference number：20A2709190

In Situ Study of Molecular Doping of Chlorine on MoS₂ Field Effect Transistor Device in Ultrahigh Vacuum Conditions

超高真空条件におけるMoS_2電界効果トランジスタデバイスへの塩素の分子ドーピングのその場研究【JST・京大機械翻訳】

Author (13)： Trung Nguyen Tat (Department of Chemistry, Graduate School of Science, Tohoku University, Japan) ,  Hossain Mohammad Ikram (Department of Chemistry, Graduate School of Science, Tohoku University, Japan) ,  Alam Md Iftekharul (Department of Chemistry, Graduate School of Science, Tohoku University, Japan) ,  Ando Atsushi (Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan) ,  Kitakami Osamu (Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Japan) ,  Kitakami Osamu (Center for Spintronics Research Network, Tohoku University, Japan) ,  Kikuchi Nobuaki (Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Japan) ,  Kikuchi Nobuaki (Center for Spintronics Research Network, Tohoku University, Japan) ,  Takaoka Tsuyoshi (Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Japan) ,  Sainoo Yasuyuki (Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Japan) ,  Arafune Ryuichi (International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Ibaraki, Japan) ,  Komeda Tadahiro (Institute of Multidisciplinary Research for Advanced Materials (IMRAM, Tagen), Tohoku University, Japan) ,  Komeda Tadahiro (Center for Spintronics Research Network, Tohoku University, Japan)
Material： ACS Omega
Volume： 5  Issue： 43  Page： 28108-28115  Publication year： 2020 
JST Material Number： W5044A  ISSN： 2470-1343  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We report a precise measuremen...

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Thesaurus term： mobility (ratio) ,  *ultra high vacuum ,  charge transfer ,  *Chlorine ,  covering ,  *FET ,  monomolecular layer ,  *doping ,  negative electric charge ,  density functional method ,  threshold voltage ,  adsorbate ,  Molecular adsorption
Semi thesaurus term： ドレイン電流 ,  ゲート電圧 , 【Automatic Indexing@JST】

JST classification (1)： Transistors  (NC03070N)

Terms in the title (6)： 高真空 ,  電界効果トランジスタ ,  塩素 ,  分子 ,  ドーピング ,  研究