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J-GLOBAL ID:202002246201321379   Reference number:20A0513987

Operation Principle and Structure of Normally-off Floating Gate GaN HEMT with Injection Gate

注入ゲート導入型ノーマリオフFloating Gate GaN HEMTの動作原理と構造
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Volume: 119  Issue: 408(ED2019 93-105)  Page: 55-58  Publication year: Jan. 24, 2020 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Transistors 
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