Low Temperature Fabrication of SiN<sub>x</sub> films through Control of Growth of Nanoparticles in Reactive Plasma

KAMATAKI KUNIHIRO; YOSHIDA TOMOAKI; ABE KOHEI; SASAKI YUSUKE; NAGAISHI SHOTA; IWAMOTO RYOSUKE; YAMASHITA DAISUKE; ITAGAKI NAHO; KOGA KAZUNORI; KOGA KAZUNORI; SHIRATANI MASAHARU

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J-GLOBAL ID：202002248620284286 Reference number：20A0992436

Low Temperature Fabrication of SiN_x films through Control of Growth of Nanoparticles in Reactive Plasma

反応性プラズマ中のナノ粒子制御によるSiN_x膜の低温作製

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Volume： 75 Issue： 1 Page： ROMBUNNO.17pD13-7 Publication year： Mar. 23, 2020
JST Material Number： S0671C ISSN： 2189-079X Document type： Proceedings
Article type：短報 Country of issue： Japan (JPN) Language： JAPANESE (JA)

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Semiconductor thin films , Manufacturing technology of solid-state devices

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Low Temperature Fabrication of SiNx films through Control of Growth of Nanoparticles in Reactive Plasma

Low Temperature Fabrication of SiN_x films through Control of Growth of Nanoparticles in Reactive Plasma