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J-GLOBAL ID：202002260421819561   Reference number：20A0487426

GaN-Based Monolithic Inverter Consisting of Enhancement- and Depletion-Mode MOSFETs by Si Ion Implantation

Siイオン注入による増強および空乏モードMOSFETから成るGaNベースモノリシックインバータ【JST・京大機械翻訳】

Author (7)： Okada Hiroshi (Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan) ,  Okada Hiroshi (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan) ,  Miwa Kiyomasa (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan) ,  Yokoyama Taichi (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan) ,  Yamane Keisuke (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan) ,  Wakahara Akihiro (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan) ,  Sekiguchi Hiroto (Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan)
Material： Physica Status Solidi. A. Applications and Materials Science  (Physica Status Solidi. A.)
Volume： 217  Issue： 3  Page： e1900550  Publication year： 2020 
JST Material Number： D0774A  ISSN： 1862-6300  CODEN： PSSABA  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： Herein, the effects of Si ion ...

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Thesaurus term： *gallium nitride ,  *silicon ,  oxide ,  *MOSFET ,  mobility (ratio) ,  channel ,  doping ,  Magnesium ,  radiation dose ,  voltage ,  condenser (capacitor) ,  *ion implantation ,  bias ,  integrated circuit ,  semiconductor

Author keywords (5)： GaN ,  integrated circuits ,  inverters ,  ion implantation ,  MOSFETs

JST classification (1)： Transistors  (NC03070N)

Terms in the title (6)： Siイオン ,  注入 ,  増強 ,  空乏モード ,  MOSFET ,  GaN