Art

J-GLOBAL ID：202102291646136704   Reference number：21A0013202

Surface Ga-boosted Boron-doped $¥mathrm{Si}_{0.5}¥mathrm{Geo}_{0.5}$ using In-situ CVD Epitaxy: Achieving $1.1 ¥times 10^{21}¥mathrm{cm}^{-3}$ Active Doping Concentration and $5.7¥times 10^{-10}¥Omega-¥mathrm{cm}^{2}$ Contact Resistivity

In-situ CVDエピタクシーを用いた表面Gaブーストほう素ドープSi_0.5Geo_0.5:1.1±10≦21cm-3活性ドーピング濃度および5.7≦10-10Ω-cmν=2接触抵抗率の達成【JST・京大機械翻訳】

Author (12)： Xu Haiwen (National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576) ,  Zhang Jishen (National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576) ,  Lima Lucas P B (ASM, Belgium,Leuven,Belgium,3001) ,  Margetis Joe (ASM, America,Phoenix,AZ,USA,85034) ,  Khazaka Rami (ASM, Belgium,Leuven,Belgium,3001) ,  Xie Qi (ASM, Belgium,Leuven,Belgium,3001) ,  Tolle John (ASM, America,Phoenix,AZ,USA,85034) ,  Wang Chengkuan (National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576) ,  Wang Haibo (National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576) ,  Zhou Zuopu (National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576) ,  Kong Qiwen (National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576) ,  Gong Xiao (National University of Singapore (NUS),Department of Electrical and Computer Engineering,Singapore,117576)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2020  Issue： VLSI Technology  Page： 1-2  Publication year： 2020 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： For the first time, we have ac...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=21A0013202&from=J-GLOBAL&jstjournalNo=W2441A") }}

Thesaurus term： *epitaxy ,  optimization ,  *gallium ,  heat balance ,  *doping ,  chemical vapor deposition
Semi thesaurus term： 共ドーピング ,  伝送線路モデル ,  *比接触抵抗 , 【Automatic Indexing@JST】

JST classification (1)： Graphic and image processing in general  (JE04010I)

Terms in the title (8)： CVD ,  エピタクシー ,  Ga ,  ほう素 ,  ドープ ,  活性 ,  ドーピング ,  接触抵抗率