Rchr
J-GLOBAL ID：200901008185791873
Update date: Jul. 17, 2022
Komori Kazuhiro
コモリ カズヒロ | Komori Kazuhiro
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=K77171260
MISC (48)：
Takeru Amano, Takeyoshi Sugaya, Kazuhiro Komori. Characteristics of 1.3 mu m quantum-dot lasers with high-density and high-uniformity quantum dots. APPLIED PHYSICS LETTERS. 2006. 89. 17
Takeru Amano, Takeyoshi Sugaya, Shohgo Yamauchi, Kazuhiro Komori. Realization of 1.3 mu m InAs quantum dots with high-density, uniformity, and quality. JOURNAL OF CRYSTAL GROWTH. 2006. 295. 2. 162-165
Takeyoshi Sugaya, Takeru Amano, Kazuhiro Komori. Improved optical properties of InAs quantum dots grown with an As-2 source using molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS. 2006. 100. 6. 063107-1-063107-4
T Amano, S Yamauchi, T Sugaya, K Komori. Control of subband energy levels of quantum dots using InGaAs gradient composition strain-reducing layer. APPLIED PHYSICS LETTERS. 2006. 88. 26. 261110-261112
T Sugaya, K Komori, T Yamane, S Hori, K Yonei. InGaAs dual channel transistors with negative differential resistance. APPLIED PHYSICS LETTERS. 2006. 88. 14. 142107-1-142107-3
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