Rchr
J-GLOBAL ID：200901017764983236
Update date: Jan. 17, 2008
Ikeda Mitsuhisa
イケダ ミツヒサ | Ikeda Mitsuhisa
Affiliation and department：
旧所属 広島大学 大学院工学研究科2
About 旧所属 広島大学 大学院工学研究科2
Search "旧所属 広島大学 大学院工学研究科2"
Job title：
産官学連携研究員
Research field (1)：
Electric/electronic material engineering
Research keywords (4)：
メモリ
, 量子ドット
, シリコン
, 半導体
Research theme for competitive and other funds (1)：
シリコン量子構造の形成法と機能デバイスへの応用
MISC (8)：
Multiple-Step Electron Charging in Si Quantum-Dot Floating Gate MOS Memories (共著). Digest of Papers Microprocesses and Nanotechnology 2002. 2002. pp. 116-117
Control of The Positioning of Self-Assmbling Si Quantum Dots on Ultrathin SiO2/c-Si by Using Scanning Probe (共著). Digest of Papers Microprocesses and Nanotechnology 2001. 2001. pp. 282-283
Charge Injection Characteristics of a Si Quantum Dot Floating Gate in MOS Structures (共著). Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials. 2001. pp. 308-309
Control of self-assembling formation of nanometer silicon dots by low pressure chemical vapor deposition (共著). Thin Solid Films. 2000. 369, pp. 55-59
Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique (共著). Japanese Journal of Applied Physics. 2000. Vol. 39, Part 1, No. 4B, pp. 2318-2320
ｍore...
Education (2)：
- 2002 Hiroshima University
- 1996 Hiroshima University Faculty of Engineering Cluster 2 (Electrical, Electronic, System and Information)
Professional career (1)：
修士 (広島大学)
Work history (1)：
2002 - -:広島大学 産官学連携研究員
Association Membership(s) (1)：
応用物理学会
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in
researchmap
.
For details, see here
.
Return to Previous Page
TOP
BOTTOM
