Rchr
J-GLOBAL ID：200901047294980380
Update date: Jul. 31, 2022
Hariu Takashi
ハリウ タカシ | Hariu Takashi
Affiliation and department：
Job title：
教授
Homepage URL (1)：
http://www.dse.ibaraki.ac.jp/
Research field (4)：
Electronic devices and equipment
, Electric/electronic material engineering
, Crystal engineering
, Applied materials
Research keywords (4)：
Electron Devices and Apparatus Engineering
, Electronic and Electric Materials Engineering
, 電子デバイス・機器工学
, 電子・電気材料工学
Research theme for competitive and other funds (12)：
- 酸化チタン薄膜の特性制御
- 酸化亜鉛薄膜のプラズマ・アシステド・エピタキシ
- 水溶液中光化学反応のための半導体薄膜
- ヘテロ接合の特性制御と評価
- 化合物半導体の物性制御のための新しい方法
- 化合物半導体のプラズマ・アシステド・エピタキシ
- Property control of TiO2 films
- Plasma-Assisted-Epitaxial Growth of ZnO
- Semiconductor films for photochemical reaction in aqueous solution
- Control and characterization of electronic properties of heterojunctions
- New methods to control electronic properties of compound semiconductors
- Plasma-assisted epitaxy of compound semiconductors
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MISC (29)：
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S Yamauchi, T Ashiga, A Nagayama, T Hariu. Plasma-assisted epitaxial growth of ZnO layer on sapphire. JOURNAL OF CRYSTAL GROWTH. 2000. 214. 63-67
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A Nagayama, S Yamauchi, T Hariu. Suppression of gate leakage current in n-AlGaAs/GaAs power HEMTs. IEEE TRANSACTIONS ON ELECTRON DEVICES. 2000. 47. 3. 517-522
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Low temperatene epitaxial growth of ZnO layer by plasma-assisted epitaxy(共著). Thim Solid Films. 1999. 345. 1. 12-17
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K Suzuki, T Muranoi, R Sugita, M Takeuchi, T Hariu. Problems of the human body model and electrostatic discharge part 1: Discharge from LSIs held by a charged person. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 1998. 13. 9. 967-971
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S Yamauchi, T Hariu, H Ohba, K Sawamura. Total low temperature plasma process for epitaxial growth of compound semiconductors on Si : InSb/Si. THIN SOLID FILMS. 1998. 316. 1-2. 93-99
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Books (13)：
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光エレクトロニクスデバイス改訂版
培風館 1999
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Optimization of initial layer for highly-mismatched heteroepitaxial growth : InSb on Si
Proc. 23rd International Symposium on Compound Semiconductors 1997
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Epitaxial growth of ZnSe in pure nitrogen plasma
Proc. 3rd Asia-Pacific Conf. Plasma Science & Technology 1996
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On the Optimum supply ratio in low temperature epitaxial growth of Compound Semiconductors
Proc. 22nd International Symposium on Compound Semiconductors 1996
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The effective species for nitrogen doping in ZnSe
Proc. 22nd International Symposium on Compound Semiconductors 1996
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Works (7)：
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化合物半導体の低温エピタキシァル成長
1991 - 1993
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Low temperature Epitaxial Growth of Compound Semiconductors
1991 - 1993
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混晶エレクトロニクス
1985 - 1987
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Alloyed Semiconductor Physics & Electronics
1985 - 1987
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GaAs表面不活性膜の研究
1980 - 1982
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Education (4)：
- - 1967 Tohoku University
- - 1967 Tohoku University Graduate School, Division of Engineering
- - 1961 Tohoku University Faculty of Engineering
- - 1961 Tohoku University Faculty of Engineering
Professional career (1)：
- (BLANK) (Tohoku University)
Work history (6)：
- 1971 - 1995 Tohoku University
- 1971 - 1995 Tohoku University, Associate Professor
- 1972 - 1974 連合王国ニューカッスル大学 上級研究員
- 1972 - 1974 University of Newcastle upon Tyne, Senior Research Associate
- 1967 - 1971 Tohoku University
- 1967 - 1971 Tohoku University, Research Associate
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Association Membership(s) (5)：
表面技術協会
, MATERIAL RESEARCH SOCIETY
, THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS
, 電子情報通信学会
, 応用物理学会
