Rchr
J-GLOBAL ID：200901052717108467
Update date: Aug. 28, 2020
TOSHIHIDE IDE
イデ トシヒデ | TOSHIHIDE IDE
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Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T74686447
MISC (18)：
T Ide, M Shimizu, J Kuo, K Jeganathan, XQ Shen, H Okumura. Surface morphology of GaN layer grown by plasma-assisted molecular beam epitaxy on MOCVD-grown GaN template. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS. 2003. 0. 7. 2549-2552
GaN初期成長におけるSi-ドーピング, GaNテンプレートの効果. 日本結晶学会誌. 2003. 30. 2. 24-30
XQ Shen, Y Tanizu, T Ide, H Okumura. Ultra-flat and high-quality AlN thin films on sapphire (0001) substrates grown by rf-MBE. 5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS. 2003. 0. 7. 2511-2514
XQ Shen, HK Cho, T Ide, M Shimizu, H Okumura. Roles of Si irradiation during the growth interruption on GaN film qualities in plasma-assisted molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2002. 41. 12B. L1428-L1430
T Ide, M Shimizu, S Hara, DH Cho, K Jeganathan, XQ Shen, H Okumura, T Nemoto. Improvement of DC characteristics in AlGaN/GaN heterojunction field-effect transistors employing AlN spacer layer. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2002. 41. 9. 5563-5564
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