Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer.

IDE T; SHIMIZU M; HARA S; CHO D-H; JEGANATHAN K; SHEN X-Q; OKUMURA H; NEMOTO T

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J-GLOBAL ID：200902172455401957 Reference number：02A0809532

Improvement of DC Characteristics in AlGaN/GaN Heterojunction Field-Effect Transistors Employing AlN Spacer Layer.

AlNスペーサ層を使ったAlGaN/GaNヘテロ接合電界効果トランジスタのdc特性の改善

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Material：
Volume： 41 Issue： 9 Page： 5563-5564 Publication year： Sep. 15, 2002
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Transistors

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