Rchr
J-GLOBAL ID：200901055863021500
Update date: Apr. 30, 2020
Boyama Shinya
ボウヤマ シンヤ | Boyama Shinya
Affiliation and department：
旧所属 三重大学 大学院工学研究科 材料科学専攻
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Research field (2)：
Crystal engineering
, Applied materials
Research theme for competitive and other funds (1)：
2000 - 2005 ハイドライド気相エピタキシャル成長法によるIII族窒化物半導体結晶成長に関する研究
MISC (7)：
Growth of high-quality GaN on FACELO substrate by raised-pressure HVPE. Physica Status Solidi (c). 2003. 0. 2159-2162
High quality GaN Grown by Raised-Pressure HVPE. physica status solidi (a). 2002. 194. 528-531
Carrier gas dependence of ELO GaN grown by hydride VPE. Journal of Crystal Growth. 2002. 237-239, 1055-1059
S Bohyama, K Yoshikawa, H Naoi, H Miyake, K Hiramatsu, Y Iyechika, T Maeda. Distribution of threading dislocations in epitaxial lateral Overgrowth GaN by hydride vapor-phase epitaxy using mixed carrier gas of H-2 and N-2. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS. 2002. 41. 1. 75-76
High Quality GaN Grown by Raised-Pressure HVPE. physica status solidi (a). 2002. 194. 528-531
ｍore...
Education (4)：
- 2002 Mie University
- 2002 Mie University Graduate School, Division of Engineering Electrical and Electronic Engineering
- 2000 Mie University Faculty of Engineering Department of Electrical and Electronic Engineering
- 2000 Mie University Faculty of Engineering Electrical and Electronic Engineering
Professional career (1)：
Master(Engineering) (Mie University)
Association Membership(s) (2)：
応用物理学会
, The Japan Society of Applied Physics
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