Art
J-GLOBAL ID:200902102538468508
Reference number:03A0079037
High Quality GaN Grown by Raised-Pressure HVPE.
昇圧HVPEによる高品質GaN成長
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Author (7):
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Material:
Volume:
194
Issue:
2
Page:
528-531
Publication year:
Dec. 16, 2002
JST Material Number:
D0774A
ISSN:
0031-8965
Document type:
Article
Article type:
原著論文
Country of issue:
Germany, Federal Republic of (DEU)
Language:
ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
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Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor thin films
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.
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