Art
J-GLOBAL ID:200902102538468508   Reference number:03A0079037

High Quality GaN Grown by Raised-Pressure HVPE.

昇圧HVPEによる高品質GaN成長
Author (7):
Material:
Volume: 194  Issue:Page: 528-531  Publication year: Dec. 16, 2002 
JST Material Number: D0774A  ISSN: 0031-8965  Document type: Article
Article type: 原著論文  Country of issue: Germany, Federal Republic of (DEU)  Language: ENGLISH (EN)
Thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
Semi thesaurus term:
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
,...
   To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=03A0079037&from=J-GLOBAL&jstjournalNo=D0774A") }}
JST classification (1):
JST classification
Category name(code) classified by JST.
Semiconductor thin films 
Terms in the title (5):
Terms in the title
Keywords automatically extracted from the title.

Return to Previous Page