Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H<sub>2</sub> and N<sub>2</sub>.

BOHYAMA S; YOSHIKAWA K; NAOI H; MIYAKE H; HIRAMATSU K; IYECHIKA Y; MAEDA T

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J-GLOBAL ID：200902146354084925 Reference number：02A0191174

Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H₂ and N₂.

H₂とN₂の混合キャリアガスを用いた,水素化物気相エピタクシーによりエピタキシャル横方向成長したGaNにおける貫通転位の分布

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Material：
Volume： 41 Issue： 1 Page： 75-76 Publication year： Jan. 15, 2002
JST Material Number： G0520B ISSN： 0021-4922 Document type： Article
Article type：短報 Country of issue： Japan (JPN) Language： ENGLISH (EN)

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Semiconductor thin films , Lattice defects in semiconductors

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Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H2 and N2.

Distribution of Threading Dislocations in Epitaxial Lateral Overgrowth GaN by Hydride Vapor-Phase Epitaxy Using Mixed Carrier Gas of H₂ and N₂.