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J-GLOBAL ID：200901095243611791 Update date: Aug. 27, 2020

Yoshikawa Akihiko

ヨシカワアキヒコ | Yoshikawa Akihiko

Affiliation and department：
Job title： Chiba University
Research theme for competitive and other funds (6)：

Atomic Layer Epitaxy of Compound Semiconductors and its in-situ Optical Probing
Development of High Efficiency Blue Laser Diodes
Material Control of Widegap semiconducting Compounds by Low Temperature Epitaxy Method, such as MBE, MOVPE, etc.
化合物半導体の原子層成長とその光プローグによるその場観察
青色半導体レーザの高性能化の研究

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MISC (357)：

Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa. Experimental determination of strain-free Raman frequencies and deformation potentials for the E-2 high and A(1)(LO) modes in hexagonal InN. APPLIED PHYSICS LETTERS. 2006. 89. 17
Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa. Step-flow growth of In-polar InN by molecular beam epitaxy. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS. 2006. 45. 24-28. L730-L733
XQ Wang, SB Che, Y Ishitani, A Yoshikawa. Effect of epitaxial temperature on N-polar InN films grown by molecular beam epitaxy. JOURNAL OF APPLIED PHYSICS. 2006. 99. 7
M Yoshitani, K Akasaka, Wang, X, SB Che, Y Ishitani, A Yoshikawa. In situ spectroscopic ellipsometry in plasma-assisted molecular beam epitaxy of InN under different surface stoichiometries. JOURNAL OF APPLIED PHYSICS. 2006. 99. 4
Fabrication and characterization of polycrystalline bulk ZnO with large grain size of ~100 ?m by the spark plasma sintering. phys. stat. sol. (c) vol.3 Issue 4. 2006

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Professional career (4)：

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Association Membership(s) (6)：

MRS , IEEE , 日本結晶学会 , 電子通信情報学会 , 電気学会 , 応用物理学会

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