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Art
J-GLOBAL ID:200902242059762406   Reference number:06A0624370

Step-Flow Growth of In-Polar InN by Molecular Beam Epitaxy

分子ビームエピタキシによるIn-極性InNのステップフロー成長
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Volume: 45  Issue: 24-28  Page: L730-L733  Publication year: Jul. 25, 2006
JST Material Number: F0599B  ISSN: 0021-4922  Document type: Article
Article type: 原著論文  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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Semiconductor thin films  ,  Electric conduction in crystalline semiconductors 
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