Transport property in semiconductor nano-structures
全件表示
論文 (211件):
Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori. Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC. Materials Science in Semiconductor Processing. 2024. 173. 108126-108126
Seyed Ali Mojtahedzadeh, Hajime Tanaka, Nobuya Mori. Monte Carlo simulation of mobility enhancement in multilayer graphene with turbostratic structure. Japanese Journal of Applied Physics. 2024. 63. 3. 031004-031004
Yutoku Murakami, Sachika Nagamizo, Hajime Tanaka, Nobuya Mori. Analysis of tunneling probability in heavily doped 4H-SiC Schottky barrier diodes based on complex band structure considering barrier potential. Japanese Journal of Applied Physics. 2024
Keisuke Utsumi, Hajime Tanaka, Nobuya Mori. Theoretical analysis of electron scattering by step-terrace structures at SiC metal-oxide-semiconductor interface. Japanese Journal of Applied Physics. 2023
Sachika Nagamizo, Hajime Tanaka, Nobuya Mori. Wannier-Stark localization of electronic states in 4H-SiC MOS inversion layer. Japanese Journal of Applied Physics. 2023
Monte Carlo simulation of two-dimensional carrier mobility in wide-gap semiconductor devices
(International Symposium on Wide Gap Semiconductor Growth, Process and Device Simulation 2021 2021)