Plan-view STEM and STM study of GaSe/Ge(111) moire structures
(12th International Symposium on Atomic Level Characterizations for New Materials and Devices (ALC) '19 2019)
Influence of strain at GaSe/Ge(111) interface formed through Van der Waals epitaxy
(14th international conference on atomically controlled surfaces Interfaces and nanostructures 2018 & 26th international colloquium on scanning tunneling microscopy 2018)