研究者

J-GLOBAL ID：200901038163840168 更新日: 2020年08月28日

小木曽久人

オギソヒサト | Ogiso Hisato

所属機関・部署：
ホームページURL (1件)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H23877895
MISC (27件)：

Y Naitou, H Ogiso. Scanning capacitance microscopy evaluation of lead zirconate titanate film formed by aerosol deposition method. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2006. 45. 3B. 1922-1925
Q Wang, K Ozaki, H Ishikawa, S Nakano, H Ogiso. Indentation method to measure the residual stress induced by ion implantation. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 2006. 242. 1-2. 88-92
WANG Q, OZAKI K, ISHIKAWA H, NAKANO S, OGISO H. Indentation method to measure the residual stress induced by ion implantation�. Nuclear Instruments and Method B. 2006. 242. 1-2. 88-92
H Ogiso, M Yoshida, S Nakano, H Yasui, K Awazu. Elastic nano-structure of diamond-like carbon (DLC). NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS. 2006. 242. 1-2. 311-314
Y Naitou, A Ando, H Ogiso, S Kamiyama, Y Nara, K Nakamura, H Watanabe, K Yasutake. Spatial fluctuation of dielectric properties in Hf-based high-k gate films studied by scanning capacitance microscopy. APPLIED PHYSICS LETTERS. 2005. 87. 25. 252908-1-252908-3

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