研究者

J-GLOBAL ID：200901065520972334 更新日: 2020年06月06日

Kulandaivel Jeganathan

クランダイベルジェガナサン | Jeganathan Kulandaivel

所属機関・部署：
ホームページURL (1件)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=K41741140
MISC (14件)：

K Jeganathan, M Shimizu, H Okumura. Dynamically stable gallium-induced 3x3-SiC (0001) surface for two-dimensional GaN nucleation by molecular-beam epitaxy. JOURNAL OF APPLIED PHYSICS. 2004. 95. 7. 3761-3764
K Jeganathan, M Shimizu, T Ide, H Okumura. The effect of gallium adsorbate on SiC(0001) surface for GaN by MBE. PHYSICA STATUS SOLIDI B-BASIC RESEARCH. 2003. 240. 2. 326-329
K Jeganathan, T Ide, M Shimizu, H Okumura. Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy. JOURNAL OF APPLIED PHYSICS. 2003. 94. 5. 3260-3263
K Jeganathan, M Shimuzu, H Okumura, F Hirose, S Nishizawa. Initial stage of GaN nucleation on root 3 x root 3 R30 degrees-Ga reconstructed 4H-SiC(0001)(Si) by molecular-beam epitaxy. SURFACE SCIENCE. 2003. 527. 1-3. L197-L202
K Jeganathan, T Ide, M Shimizu, H Okumura. Strain relaxation correlated with the transport properties of AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy. JOURNAL OF APPLIED PHYSICS. 2003. 93. 4. 2047-2050

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