Shiyang Ji, Ryoji Kosugi, Kazutoshi Kojima, Kohei Adachi, Yasuyuki Kawada, Kazuhiro Mochizuki, Yoshiyuki Yonezawa, Sadafumi Yoshida, Hajime Okumura. Fast-filling of 4H-SiC trenches at 10 μm/h by enhancing partial pressures of source species in chemical vapor deposition processes. Journal of Crystal Growth. 2020. 546
K. Nagaya, T. Hirayama, T. Tawara, K. Murata, H. Tsuchida, A. Miyasaka, K. Kojima, T. Kato, H. Okumura, M. Kato. Observation of carrier lifetime distribution in 4H-SiC thick epilayers using microscopic time-resolved free carrier absorption system. Journal of Applied Physics. 2020. 128. 10
Akihiro Koyama, Mitsuru Sometani, Kensuke Takenaka, Koji Nakayama, Akira Miyasaka, Kazutoshi Kojima, Kazuma Eto, Tomohisa Kato, Junji Senzaki, Yoshiyuki Yonezawa, et al. Low VF 4H-SiC N-i-P diodes using newly developed low-resistivity p-type substrates. Japanese Journal of Applied Physics. 2020. 59. SG. SGGD14-SGGD14
Kazutoshi Kojima, Hajime Okumura. Development of 4H-SiC Schottky np diode with high blocking voltage and ultralow on-resistance. Applied Physics Letters. 2020. 116. 1
