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J-GLOBAL ID：200901002058959759   Update date: Sep. 11, 2024

Hosoi Takuji

ホソイ タクジ | Hosoi Takuji
Affiliation and department：
Kwansei Gakuin University School of Engineering Program of Electrical and Electronic Engineering

About Kwansei Gakuin University School of Engineering Program of Electrical and Electronic Engineering


Job title： Associate Professor
Research field  (3)： Thin-film surfaces and interfaces ,  Electronic devices and equipment ,  Electric/electronic material engineering
Research keywords  (1)： semiconductor device engineering
Research theme for competitive and other funds  (20)：
  • 2020 - 2023 Development of GeSn-based NIR sensing devices
  • 2015 - 2018 Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
  • 2013 - 2018 Development of new functional semiconductors by utilizing novel liquid-phase crystallization technique and understanding of their optoelectronic properties
  • 2015 - 2017 Improvement of SiO2/SiC interface properties with beam induced interface reactions and subsequent defect passivation
  • 2015 - 2017 Development of Super-resolution Technique in Transmission X-ray Imaging using Embedded X-ray Targets
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Papers (576)：
  • Mitsuharu Uemoto, Nahoto Funaki, Kazuma Yokota, Takuji Hosoi, Tomoya Ono. Density functional theory study on effect of NO annealing for SiC(0001) surface with atomic-scale steps. Applied Physics Express. 2024
  • Takayoshi Shimura, Shogo Tanaka, Takuji Hosoi, Heiji Watanabe. Fabrication and Luminescence Characterization of Ge Wires with Uniaxial Tensile Strains Applied using Internal Stresses in Deposited Metal Thin Films. Journal of Electronic Materials. 2023
  • Takayoshi Shimura, Ryoga Yamaguchi, Naoto Tabuchi, Masato Kondoh, Mizuki Kuniyoshi, Takuji Hosoi, Takuma Kobayashi, Heiji Watanabe. Controllability of luminescence wavelength from GeSn wires fabricated by laser-induced local liquid phase crystallization on quartz substrates. Japanese Journal of Applied Physics. 2023. 62. SC. SC1083-SC1083
  • Hidetoshi Mizobata, Kazuki Tomigahara, Mikito Nozaki, Takuma Kobayashi, Akitaka Yoshigoe, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. Electrical properties and energy band alignment of SiO2/GaN metal-oxide-semiconductor structures fabricated on N-polar GaN( 0001 ̄) substrates. Applied Physics Letters. 2022. 121. 6. 062104-062104
  • Takuji Hosoi, Momoe Ohsako, Kidist Moges, Koji Ito, Tsunenobu Kimoto, Mitsuru Sometani, Mitsuo Okamoto, Akitaka Yoshigoe, Takayoshi Shimura, Heiji Watanabe. Impact of post-nitridation annealing in CO2 ambient on threshold voltage stability in 4H-SiC metal-oxide-semiconductor field-effect transistors. Applied Physics Express. 2022. 15. 6. 061003-1-061003-5
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MISC (27)：
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Patents (4)：
  • X線位相差撮像装置
  • 単結晶状GeSn含有材料の製造方法および単結晶状GeSn含有材料基板
  • ゲルマニウム(Ge)半導体デバイス製造方法
  • 半導体装置およびその製造方法
Lectures and oral presentations  (15)：
  • Characterization of Electron Traps in Gate Oxide of SiC MOS Capacitors
    (IEEE International Reliability Physics Symposium (IRPS 2022) 2022)
  • Investigation of reliability of NO nitrided SiC(1-100) MOS devices
    (2022)
  • NO窒化処理を施した非基底面SiC MOSデバイスの信頼性
    ((一社)電気学会 電子デバイス研究会 2022)
  • NO窒化処理を施した4H-SiC(11-20) MOSデバイスの絶縁性および閾値安定性の評価
    (「電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-」 (第27回研究会) 2022)
  • 光吸収層を有する石英基板上GeSn細線のレーザー溶融結晶化
    (「電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-」 (第27回研究会) 2022)
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Education (3)：
  • 2001 - 2004 Osaka University Graduate School, Division of Engineering
  • 1999 - 2001 Osaka University
  • 1995 - 1999 Osaka University Faculty of Engineering Department of Applied Science
Professional career (1)：
  • - (Osaka University)
Work history (4)：
  • 2021/04 - 現在 Kwansei Gakuin University School of Engineering Program of Electrical and Electronic Engineering Associate Professor
  • 2020/04 - 2021/03 Osaka University Graduate School of Engineering . Assistant Professor
  • 2007/04/01 - 2020/03/31 Osaka University Graduate School of Engineering Division of Science and Biotechnology Assistant Professor
  • 2004/04 - 2007/03 Reasercher, Research Center for Nanodevices and Systems, Hiroshima University
Committee career (1)：
  • 2024/02 - 「ポスト5G情報通信システム基盤強化研究開発事業/先端半導体の動向調査」 採択審査委員
Awards (9)：
  • 2019/01 - IEEE Electron Devices Society Kansai Chapter IEEE EDS Kansai Chapter of the Year Award
  • 2017/04 - The 15th APEX/JJAP Editorial Contribution Award
  • 2016/09 - 公益社団法人 応用物理学会 第8回(2016年秋季)応用物理学会 Poster Award
  • 2016/03 - 応用物理学会 第7回(2016年春季)応用物理学会 Poster Award
  • 2015/07 - Osaka University The 4th Presidential Awards for Encouragement in Research, Osaka University
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Association Membership(s) (2)：
Japan Society of Applied Physics ,  IEEE Electron Device Society
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