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J-GLOBAL ID:201802286203998526   Reference number:18A0631988

SiO2/GaN MOSデバイスの信頼性向上に向けた界面酸化層の制御

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Volume: 65th  Page: ROMBUNNO.18p-C302-8  Publication year: Mar. 05, 2018 
JST Material Number: Y0054B  ISSN: 2436-7613  Document type: Proceedings
Article type: 短報  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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