Art
J-GLOBAL ID:201802240590217196   Reference number:18A0917660

Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal-oxide-semiconductor devices with improved gate dielectric reliability

ゲート誘電体信頼性を改善した高品質GaNベース金属-酸化物-半導体デバイスのためのSiO2/GaNスタックにおけるGa酸化物層間成長とGa拡散の制御
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Volume: 11  Issue:Page: 015701.1-015701.4  Publication year: Jan. 2018 
JST Material Number: F0599C  ISSN: 1882-0778  CODEN: APEPC4  Document type: Article
Article type: 短報  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Transistors  ,  Oxide thin films 
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