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J-GLOBAL ID：200901017316170313
Update date: Dec. 18, 2024 Takanashi Yoshifumi
タカナシ ヨシフミ | Takanashi Yoshifumi
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Tokyo University of Science Faculty of Industrial Science and Technology, Material Science and Technology, Tokyo University of Science Faculty of Industrial Science and Technology Material Science and Technology
About Tokyo University of Science Faculty of Industrial Science and Technology, Material Science and Technology, Tokyo University of Science Faculty of Industrial Science and Technology Material Science and Technology
Job title： Professor
Research theme for competitive and other funds (2)：
- 化合物半導体デバイス・材料
- Compound semiconductor devices and materials
- Yuta Koreeda, Yutaka Endo, Kouichi Sato, Kenya Yoshizawa, Yui Nishio, Hirohisa Taguchi, Tsutomu Iida, Yoshifumi Takanashi. Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 2. 2012. 9. 2. 357-360
- Satoshi Watanabe, Hiroshi Hyodo, Hirohisa Taguchi, Kohei Soga, Yoshifumi Takanashi, Mutsuyoshi Matsumoto. Calcination- and Etching-Free Photolithography of Inorganic Phosphor Films Consisting of Rare Earth Ion Doped Nanoparticles on Plastic Sheets. ADVANCED FUNCTIONAL MATERIALS. 2011. 21. 22. 4264-4269
- Tatsuya Sakamoto, Tsutomu Iida, Shota Kurosaki, Kenji Yano, Hirohisa Taguchi, Keishi Nishio, Yoshifumi Takanashi. Thermoelectric Behavior of Sb- and Al-Doped n-Type Mg2Si Device Under Large Temperature Differences. JOURNAL OF ELECTRONIC MATERIALS. 2011. 40. 5. 629-634
- Tatsuya Sakamoto, Tsutomu Iida, Atsunobu Matsumoto, Yasuhiko Honda, Takashi Nemoto, Junichi Sato, Tadao Nakajima, Hirohisa Taguchi, Yoshifumi Takanashi. Thermoelectric Characteristics of a Commercialized Mg2Si Source Doped with Al, Bi, Ag, and Cu. JOURNAL OF ELECTRONIC MATERIALS. 2010. 39. 9. 1708-1713
- Takashi Nemoto, Tsutomu Iida, Junichi Sato, Yohei Oguni, Atsunobu Matsumoto, Takahiro Miyata, Tatsuya Sakamoto, Tadao Nakajima, Hirohisa Taguchi, Keishi Nishio, et al. Characteristics of a Pin-Fin Structure Thermoelectric Uni-Leg Device Using a Commercial n-Type Mg2Si Source. JOURNAL OF ELECTRONIC MATERIALS. 2010. 39. 9. 1572-1578
- 半導体用語大事典
日刊工業 1999
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焼成不要な光リソグラフィーによるフレキシブル希土類発光薄膜の作製とKPFM 観察
(2012年春季 第59回 応用物理学関係連合講演会 2012) -
Two-Dimensional Patterning of Er3+-Doped Nanoparticles using Photolithography
(UK Colloids 2011 (An International Colloid and Surface Science Symposium) 2011) -
Effect of electrode material on the thermoelectric power-generation and durability characteristics of n-type Mg2Si
(EUROPEAN MATERIALS RESEARCH SOCIETY, 2011 Springl Meeting 2011) -
Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on the same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer
(38th International Symposium on Compound Semiconductors-ISCS 2011 2011) -
焼成フリーなフォトリソグラフィーによる希土類含有発光薄膜のプラスチック基板上への作製
(第63回コロイドおよび界面化学討論会 2011)
- Doctor (Electronics) (Tokyo Institute of Technology)
- 1991 - 1993 電子情報通信学会 Cグループ運営委員会特別委員
- 1990 - 1992 電子情報通信学会 電子デバイス研究会幹事
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